Imaging device and electronic apparatus

Invention Grant

US09659994B2 Imaging device and electronic apparatus 有权

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Patent Title: Imaging device and electronic apparatus
Application No.: US15148127

Application Date: 2016-05-06
Publication No.: US09659994B2

Publication Date: 2017-05-23
Inventor: Tsutomu Imoto , Keiji Mabuchi
Applicant: Sony Corporation
Applicant Address: JP Kanagawa
Assignee: Sony Semiconductor Solutions Corporation
Current Assignee: Sony Semiconductor Solutions Corporation
Current Assignee Address: JP Kanagawa
Agency: Sheridan Ross P.C.
Main IPC: H01L31/113
IPC: H01L31/113 ; H01L27/148 ; H01L27/146

Abstract:

An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Public/Granted literature

US20160247842A1 IMAGING DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2016-08-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/08	.其中的辐射控制通过该器件的电流的，例如光敏电阻器
H01L31/10	..特点在于至少有一个电位跃变势垒或表面势垒的，例如光敏晶体管
H01L31/101	...对红外、可见或紫外辐射敏感的器件
H01L31/112	....以场效应工作为特征的，如结型场效应光敏晶体管
H01L31/113	.....为导体—绝缘体—半导体型的，如金属—绝缘体—半导体场效应晶体管