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公开(公告)号：US20210167103A1
公开(公告)日：2021-06-03
申请号：US17175041
申请日：2021-02-12
Applicant: Sony Corporation
Inventor： Takeshi Yanagita , Keiji Mabuchi
IPC: H01L27/146
Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.
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公开(公告)号：US10778918B2
公开(公告)日：2020-09-15
申请号：US16511876
申请日：2019-07-15
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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公开(公告)号：US10586822B2
公开(公告)日：2020-03-10
申请号：US15858803
申请日：2017-12-29
Applicant: Sony Corporation
Inventor： Keiji Mabuchi , Shunichi Urasaki
IPC: H01L27/146 , H01L23/00 , H04N5/335 , H04N5/369 , H04N5/3745 , H04N5/374
Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.
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公开(公告)号：US20190259790A1
公开(公告)日：2019-08-22
申请号：US16398854
申请日：2019-04-30
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H01L27/146 , H04N5/369 , H04N5/335 , H04N5/3745 , H04N5/378 , H04N9/04 , H04N5/357
Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
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公开(公告)号：US20190252430A1
公开(公告)日：2019-08-15
申请号：US16393328
申请日：2019-04-24
Applicant: Sony Corporation
Inventor： Takeshi Yanagita , Keiji Mabuchi
IPC: H01L27/146
CPC classification number: H01L27/1469 , H01L27/14612 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14689
Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.
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Patent Agency Ranking
公开(公告)号：US20190174083A1
公开(公告)日：2019-06-06
申请号：US16201692
申请日：2018-11-27
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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公开(公告)号：US20190123093A1
公开(公告)日：2019-04-25
申请号：US16228244
申请日：2018-12-20
Applicant: Sony Corporation
Inventor： Taiichiro Watanabe , Akihiro Yamada , Hideo Kido , Hiromasa Saito , Keiji Mabuchi , Yuko Ohgishi
IPC: H01L27/148 , H01L27/146
CPC classification number: H01L27/14887 , H01L27/14603 , H01L27/14625 , H01L27/1464 , H01L27/14641 , H01L27/14647 , H01L27/14656
Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.
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公开(公告)号：US20190123077A1
公开(公告)日：2019-04-25
申请号：US16199529
申请日：2018-11-26
Applicant: Sony Corporation
Inventor： Keiji Mabuchi
IPC: H01L27/146 , H04N5/369 , H04N5/335 , H04N5/3745 , H04N5/378 , H04N9/04 , H04N5/357
Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
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公开(公告)号：US10136092B2
公开(公告)日：2018-11-20
申请号：US15690572
申请日：2017-08-30
Applicant: Sony Corporation
Inventor： Takeshi Yanagita , Keiji Mabuchi , Hiroaki Ishiwata
IPC: H04N3/14 , H04N5/3745 , H04N5/374 , H04N5/353 , H04N5/359 , H04N5/369 , H04N5/378 , H01L27/146
Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.
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公开(公告)号：US10070087B2
公开(公告)日：2018-09-04
申请号：US15445669
申请日：2017-02-28
Applicant: SONY CORPORATION
Inventor： Keiji Mabuchi
Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.
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