Invention Grant
- Patent Title: Method and structure for creating cavities with extreme aspect ratios
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Application No.: US14835001Application Date: 2015-08-25
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Publication No.: US09663355B2Publication Date: 2017-05-30
- Inventor: Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B32B3/24
- IPC: B32B3/24 ; B81C1/00 ; G01N33/487 ; G01N27/414 ; G01N27/447 ; H01L21/306 ; H01L29/06

Abstract:
Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.
Public/Granted literature
- US20160060106A1 METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS Public/Granted day:2016-03-03
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