- 专利标题: Method to improve transistor matching
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申请号: US14563361申请日: 2014-12-08
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公开(公告)号: US09665675B2公开(公告)日: 2017-05-30
- 发明人: Ashesh Parikh , Chi-Chien Ho , Thomas John Smelko , Rajni J. Aggarwal
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 代理商 Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; H01L21/8234 ; H01L21/66
摘要:
A method to adjust transistor gate geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to form a reticle. A method to adjust transistor geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to compensate for transistor turn on voltage drop off where the transistor gate crosses the isolation/active interface.
公开/授权文献
- US20150187655A1 METHOD TO IMPROVE TRANSISTOR MATCHING 公开/授权日:2015-07-02
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