Invention Grant
- Patent Title: Through-substrate structure and method for fabricating the same
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Application No.: US14556215Application Date: 2014-11-30
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Publication No.: US09666507B2Publication Date: 2017-05-30
- Inventor: Chun-Hung Chen , Chien-Li Kuo , Ming-Tse Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/532
Abstract:
A method for fabricating through-substrate structure is disclosed. The method includes the steps of: providing a substrate; forming a through-substrate hole and a through-substrate trench in the substrate; and forming a metal layer in the through-substrate hole and the through-substrate trench for forming a through-substrate via and a through-substrate conductor having a void therein.
Public/Granted literature
- US20160155685A1 THROUGH-SUBSTRATE STRUCTURE AND MEHTOD FOR FABRICATING THE SAME Public/Granted day:2016-06-02
Information query
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