Invention Grant
- Patent Title: Method of fabricating connection structure for a substrate
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Application No.: US14683716Application Date: 2015-04-10
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Publication No.: US09666548B2Publication Date: 2017-05-30
- Inventor: Chih-Sheng Lin , Chun-Lung Chen , Hsin-Hung Lee
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101142584A 20121115
- Main IPC: C25D5/02
- IPC: C25D5/02 ; H01L23/00 ; H05K1/11 ; H05K3/40 ; C23C14/34 ; C25D7/12

Abstract:
A connection structure for a substrate is provided. The substrate has a plurality of connection pads and an insulation protection layer with the connection pads being exposed therefrom. The connection structure includes a metallic layer formed on an exposed surface of each of the connection pads and extending to the insulation protection layer, and a plurality of conductive bumps disposed on the metallic layer and spaced apart from one another at a distance less than or equal to 80 μm, each of conductive bumps having a width less than a width of each of the connection pads. Since the metallic layer covers the exposed surfaces of the connection pads completely, a colloid material will not flow to a surface of the connection pads during a subsequent underfilling process of a flip-chip process. Therefore, the colloid material will not be peeled off from the connection pads.
Public/Granted literature
- US20150214169A1 METHOD OF FABRICATING CONNECTION STRUCTURE FOR A SUBSTRATE Public/Granted day:2015-07-30
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