- 专利标题： Photoelectric transducer device including a transistor including an oxide semiconductor layer
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申请号： US13150652申请日： 2011-06-01
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公开(公告)号： US09667148B2公开(公告)日： 2017-05-30
- 发明人: Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
- 申请人： Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2010-129033 20100604
- 主分类号： G05F1/10
- IPC分类号： G05F1/10 ; H02M3/158 ; H01L27/12 ; H01L31/048 ; H02S40/32
摘要：
An object is to obtain a rectifier having a small voltage drop and to reduce the fabrication cost of a converter circuit. A photoelectric transducer device including: a photoelectric transducer element; and a converter circuit stepping up or stepping down an output of the photoelectric transducer element and including a switching element and a rectifier, in which the switching element is a first oxide semiconductor transistor that is normally off and in which the rectifier is a second oxide semiconductor transistor that is diode-connected and normally on.
公开/授权文献
- US20120019222A1 Photoelectric Transducer Device 公开/授权日：2012-01-26
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