- 专利标题: Through silicon via bonding structure
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申请号: US14596088申请日: 2015-01-13
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公开(公告)号: US09673174B2公开(公告)日: 2017-06-06
- 发明人: Tsung-Ding Wang , Chen-Shien Chen , Kai-Ming Ching , Bo-I Lee , Chien-Hsun Lee
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L29/40
- IPC分类号: H01L29/40 ; H01L25/065 ; H01L21/18 ; H01L23/48 ; H01L23/00
摘要:
System and method for bonding semiconductor substrates is presented. A preferred embodiment comprises forming a buffer layer over a surface of a semiconductor substrate while retaining TSVs that protrude from the buffer layer in order to prevent potential voids that might form. A protective layer is formed on another semiconductor substrate that will be bonded to the first semiconductor substrate. The two substrates are aligned and bonded together, with the buffer layer preventing any short circuit contacts to the surface of the original semiconductor substrate.
公开/授权文献
- US20150137328A1 Through Silicon Via Bonding Structure 公开/授权日:2015-05-21
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