Invention Grant
- Patent Title: Isolated complementary metal-oxide semiconductor (CMOS) devices for radio-frequency (RF) circuits
-
Application No.: US14920851Application Date: 2015-10-22
-
Publication No.: US09673275B2Publication Date: 2017-06-06
- Inventor: Daeik Daniel Kim , Changhan Hobie Yun , Je-Hsiung Jeffrey Lan , Niranjan Sunil Mudakatte , Jonghae Kim , Matthew Michael Nowak
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L23/48 ; H01L21/762 ; H01L21/768 ; H01L21/78

Abstract:
Isolated complementary metal-oxide semiconductor (CMOS) devices for radio-frequency (RF) circuits are disclosed. In some aspects, an RF circuit includes CMOS devices, a silicon substrate having doped regions that define the CMOS devices, and a trench through the silicon substrate. The trench through the silicon substrate forms a continuous channel around the doped regions of one of the CMOS devices to electrically isolate the CMOS device from other CMOS devices embodied on the silicon substrate. By so doing, performance characteristics of the CMOS device, such as linearity and signal isolation, may be improved over those of conventional CMOS devices (e.g., bulk CMOS).
Public/Granted literature
- US20170117358A1 ISOLATED COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) DEVICES FOR RADIO-FREQUENCY (RF) CIRCUITS Public/Granted day:2017-04-27
Information query
IPC分类: