Invention Grant
- Patent Title: Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities
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Application No.: US14694602Application Date: 2015-04-23
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Publication No.: US09673353B2Publication Date: 2017-06-06
- Inventor: Jun-Rong Chen , Hsiu-Mei Chou , Jhao-Cheng Ye
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Moser Taboada
- Priority: TW101124450A 20120706
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/02 ; H01L33/00 ; H01L33/12 ; H01L21/02 ; C30B23/04 ; C30B25/04 ; C30B29/40

Abstract:
An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.
Public/Granted literature
- US20150228853A1 EPITAXIAL STRUCTURE AND EPITAXIAL GROWTH METHOD FOR FORMING EPITAXIAL LAYER WITH CAVITIES Public/Granted day:2015-08-13
Information query
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