Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location
Abstract:
A device is disclosed that includes a driver, a sinker, a memory column, a reference column, a reference resistor and a sensing unit. At least one of the driver and the sinker has a trimmable resistance. For write operation, one of resistive memory cells is conducted based on a row location in the memory column thereof, the driver provides a write current flowing therethrough and the trimmable resistance is trimmed based on the row location. For read operation, the sensing unit senses a read current of the memory column and a reference current of the reference column and the reference resistor when one of the resistive memory cells and a positionally corresponding one of the reference bit cells are conducted.
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