Invention Grant
- Patent Title: Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location
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Application No.: US15065787Application Date: 2016-03-09
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Publication No.: US09679643B1Publication Date: 2017-06-13
- Inventor: Chung-Cheng Chou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/36 ; G11C13/00 ; G11C11/16

Abstract:
A device is disclosed that includes a driver, a sinker, a memory column, a reference column, a reference resistor and a sensing unit. At least one of the driver and the sinker has a trimmable resistance. For write operation, one of resistive memory cells is conducted based on a row location in the memory column thereof, the driver provides a write current flowing therethrough and the trimmable resistance is trimmed based on the row location. For read operation, the sensing unit senses a read current of the memory column and a reference current of the reference column and the reference resistor when one of the resistive memory cells and a positionally corresponding one of the reference bit cells are conducted.
Information query