Invention Grant
- Patent Title: Methods of forming memory cells with air gaps and other low dielectric constant materials
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Application No.: US15154467Application Date: 2016-05-13
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Publication No.: US09679778B2Publication Date: 2017-06-13
- Inventor: Minsoo Lee , Akira Goda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L21/764 ; H01L29/788 ; H01L29/423 ; H01L27/11519 ; H01L27/11556 ; H01L27/11565 ; H01L27/11582

Abstract:
Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap, is between the first dielectric material and the second dielectric material and adjacent to the conductive material. The charge storage element has a first surface and a second surface. The first and second surfaces are substantially separated from the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap. Additional apparatuses and methods are disclosed.
Public/Granted literature
- US20160254159A1 METHODS OF FORMING MEMORY CELLS WITH AIR GAPS AND OTHER LOW DIELECTRIC CONSTANT MATERIALS Public/Granted day:2016-09-01
Information query
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