Invention Grant
- Patent Title: Current selectors formed using single stack structures
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Application No.: US15225980Application Date: 2016-08-02
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Publication No.: US09680092B2Publication Date: 2017-06-13
- Inventor: Federico Nardi , Mark Clark
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; H01L29/861 ; H01L27/108 ; H01L27/11 ; H01L29/45 ; H01L23/528

Abstract:
Provided are hybrid electrodes comprising base structures and plugs disposed within the base structures. Also provided are selector elements comprising such hybrid electrodes and memory arrays with selector elements used for addressing individual memory cells. Specifically, the base structure and plug of a hybrid electrode have different compositions but both interface the same dielectric of the selector element. This design allows anti-parallel diode and other configurations with a very few components. The base structure and plug may have different dopants, different stoichiometry of the same alloy, or formed from completely different materials. The interfacing surface portions of a hybrid electrode may have different sizes. A combination of these surface portions (e.g., areas, surface conditions) and materials (e.g., compositions) can be used for tuning operating characteristics of selector elements using such hybrid electrodes.
Public/Granted literature
- US20170062524A1 Current Selectors Formed Using Single Stack Structures Public/Granted day:2017-03-02
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