A method is disclosed for operating a Conductive Bridge Random Access Memory (CBRAM) device that includes an electrolyte element sandwiched between a cation supply top electrode and a bottom electrode. The method comprises conditioning the CBRAM device by applying a forming current pulse having a pulse width (tf) of 100 ns or less and a pulse amplitude (If) of 10 uA or less, and when programming, setting the conditioned CBRAM device to a Low Resistance State (LRS) by applying a set current pulse having a pulse width (ts) of 100 ns or less and a pulse amplitude (Is) equal to or larger than the forming current pulse amplitude (If).