Invention Grant
- Patent Title: Method of manufacturing a polysilicon (poly-Si) layer
-
Application No.: US14864402Application Date: 2015-09-24
-
Publication No.: US09685326B2Publication Date: 2017-06-20
- Inventor: Sang-Ho Moon , Jong-Moo Huh , Sung-Ho Kim
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR10-2012-0141197 20121206
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L27/32 ; H01L27/12 ; H01L21/266 ; H01L21/311 ; H01L49/02 ; H01L29/66

Abstract:
A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.
Public/Granted literature
- US20160013055A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS Public/Granted day:2016-01-14
Information query
IPC分类: