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公开(公告)号：US12302638B2
公开(公告)日：2025-05-13
申请号：US17899554
申请日：2022-08-30
Applicant: Samsung Display Co., LTD.
Inventor： Sang-Ho Moon , Chun Gi You , Tae Kon Kim
IPC: H10K59/123 , H10D86/40 , H10K50/814 , H10K59/121 , H10K59/131 , H10K71/00 , H10K71/20 , H10D30/67 , H10D86/01 , H10D86/60 , H10K59/12
Abstract: An organic light emitting diode display includes a substrate, a semiconductor layer disposed on the substrate, a first insulating layer which covers the semiconductor layer, a first conductive layer disposed on the first insulating layer, a second insulating layer which covers the first conductive layer, a second conductive layer disposed on the second insulating layer, a third insulating layer which covers the second conductive layer, a third conductive layer disposed on the third insulating layer, a first organic layer which covers the third conductive layer, and a fourth conductive layer disposed on the first organic layer, where the fourth conductive layer includes a lower layer, a middle layer, and an upper layer, and the lower layer is disposed between the first organic layer and the middle layer, and includes a transparent conductive oxidization film.
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公开(公告)号：US09570534B2
公开(公告)日：2017-02-14
申请号：US14946231
申请日：2015-11-19
Applicant: Samsung Display Co., Ltd.
Inventor： Kyu-Sik Cho , Won-Kyu Lee , Tae-Hoon Yang , Byoung-Kwon Choo , Sang-Ho Moon , Bo-Kyung Choi , Yong-Hwan Park , Joon-Hoo Choi , Min-Chul Shin , Yun-Gyu Lee
CPC classification number: H01L27/3279 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3262 , H01L27/3265
Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.
Abstract translation: 一种有机发光二极管显示器包括：基板，分别包括形成在第一和第二区域上的第一和第二栅电极，分别形成在第一和第二栅电极上的第一和第二栅极绝缘体， 以及分别形成在所述第一和第二栅极绝缘体上的第二半导体层，所述第一半导体层分别包括第一沟道区，所述第二半导体层包括第二沟道区，在所述衬底上形成的层间绝缘体，以及至少部分 第一和第二半导体层，分别形成在第一和第二沟道区上并由层间绝缘体包围的第一和第二蚀刻停止层，以及第一和第二源电极和第一和第二漏电极接触 第一和第二半导体层分别通过层间绝缘体。
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公开(公告)号：US09202828B2
公开(公告)日：2015-12-01
申请号：US14631023
申请日：2015-02-25
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Sang-Ho Moon , Jong-Moo Huh , Sung-Ho Kim
IPC: H01L29/00 , H01L21/00 , H01L27/12 , H01L21/02 , H01L27/32 , H01L21/266 , H01L21/311 , H01L49/02 , H01L29/66
CPC classification number: H01L21/02532 , H01L21/02422 , H01L21/02488 , H01L21/02592 , H01L21/02595 , H01L21/02667 , H01L21/02678 , H01L21/02686 , H01L21/266 , H01L21/31111 , H01L21/31144 , H01L27/1255 , H01L27/1274 , H01L27/1285 , H01L27/1288 , H01L27/3244 , H01L27/3265 , H01L28/60 , H01L29/66757 , H01L2227/323
Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.
Abstract translation: 多晶硅（poly-Si）层的制造方法，使用该方法的有机发光显示装置的制造方法以及使用该方法制造的有机发光显示装置。 该方法包括在具有第一和第二区域的衬底上形成非晶硅（a-Si）层，热处理a-Si层以将a-Si层部分地结晶成部分结晶的Si层，通过 热处理，用激光束选择性地照射第一区域以结晶部分结晶的Si层。
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公开(公告)号：US11991908B2
公开(公告)日：2024-05-21
申请号：US17377528
申请日：2021-07-16
Applicant: Samsung Display Co., Ltd.
Inventor： Sang-Ho Moon , Chungi You , Taejong Eom
IPC: H10K59/131 , G02F1/01 , G02F1/1333 , G02F1/1339 , G02F1/1362 , G02F1/161 , G02F1/1679 , H10K50/84
CPC classification number: H10K59/131 , G02F1/0107 , G02F1/133388 , G02F1/1339 , G02F1/136286 , G02F1/13629 , G02F1/161 , G02F1/1679 , H10K50/841
Abstract: A display device includes an array substrate including a pixel array disposed in a display area, an encapsulation substrate, and a sealing member disposed between the array substrate and the encapsulation substrate to combine the array substrate with the encapsulation substrate. The array substrate includes a signal transfer wing overlapping the sealing member and electrically connected to the pixel array, an insulation layer covering the signal transfer wiring and including an inorganic material, a power transfer wiring disposed on the insulation layer, overlapping the sealing member and having a multi-wiring structure, and an expansion pattern connected to the power transfer wiring, having a thickness smaller than an entire thickness of the power transfer wiring and overlapping the sealing member and the signal transfer wiring. An outer edge of the expansion pattern is disposed within a sealing area where the sealing member is disposed.
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公开(公告)号：US11436976B2
公开(公告)日：2022-09-06
申请号：US17349841
申请日：2021-06-16
Applicant: Samsung Display Co., LTD.
Inventor： Sang-Ho Moon , Chun Gi You , Hyoung Hak Kim
IPC: G09G3/3225 , H01L27/32 , H01L51/52
Abstract: A display device includes: a substrate including a display area configured to display images and a non-display area around the display area; a plurality of driving voltage lines in the display area; a plurality of initialization voltage lines in the display area; a plurality of driving voltage transmission lines in the non-display area and configured to transmit a driving voltage to the driving voltage line, and including a first driving voltage transmission line and a second driving voltage transmission line adjacent to each other; an initialization voltage transmission line in the non-display area and configured to transmit an initialization voltage to the initialization voltage line; and a bridge connecting the first driving voltage transmission line and the second driving voltage transmission line and overlapping the initialization voltage transmission line.
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Patent Agency Ranking
公开(公告)号：US09685326B2
公开(公告)日：2017-06-20
申请号：US14864402
申请日：2015-09-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Sang-Ho Moon , Jong-Moo Huh , Sung-Ho Kim
IPC: H01L21/00 , H01L21/02 , H01L27/32 , H01L27/12 , H01L21/266 , H01L21/311 , H01L49/02 , H01L29/66
CPC classification number: H01L21/02532 , H01L21/02422 , H01L21/02488 , H01L21/02592 , H01L21/02595 , H01L21/02667 , H01L21/02678 , H01L21/02686 , H01L21/266 , H01L21/31111 , H01L21/31144 , H01L27/1255 , H01L27/1274 , H01L27/1285 , H01L27/1288 , H01L27/3244 , H01L27/3265 , H01L28/60 , H01L29/66757 , H01L2227/323
Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.
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公开(公告)号：US09070904B2
公开(公告)日：2015-06-30
申请号：US14193227
申请日：2014-02-28
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
CPC classification number: H01L51/56 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L27/3265
Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.
Abstract translation: OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层 以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及 电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。
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8.发明授权公开(公告)号：US11744125B2
公开(公告)日：2023-08-29
申请号：US17191919
申请日：2021-03-04
Applicant: Samsung Display Co., Ltd.
Inventor： Sang-Ho Moon , Chungi You
IPC: H01L27/02 , H10K59/131 , H10K59/126
CPC classification number: H10K59/131 , H01L27/0255 , H10K59/126
Abstract: A display device includes a substrate including a display area and a non-display area, a first wiring at the non-display area of the substrate, a second wiring on a layer that is different from the first wiring at the non-display area of the substrate, an inorganic insulating layer on the first wiring and the second wiring, a pad on the inorganic insulating layer, and connected to a first end of the first wiring, a contact bridge on the inorganic insulating layer, and connecting the second wiring to a second end of the first wiring, an electrostatic electrode on the inorganic insulating layer between the pad and the contact bridge, a first organic insulating layer covering the contact bridge and the electrostatic electrode, and exposing the pad, a first upper wiring on the first organic insulating layer, and overlapping the contact bridge and the electrostatic electrode, and a second organic insulating layer on the first upper wiring.
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公开(公告)号：US10283533B2
公开(公告)日：2019-05-07
申请号：US15344084
申请日：2016-11-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Sang Kyung Lee , Sang-Ho Moon
IPC: H01L27/12 , H01L27/32 , H01L21/44 , H01L29/417 , H01L29/423 , H01L29/786
Abstract: A transistor array panel includes a transistor disposed on a substrate. The transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor, and a top electrode. The top electrode is disposed on and overlaps the semiconductor, and is electrically connected to the source electrode.
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公开(公告)号：US09012916B2
公开(公告)日：2015-04-21
申请号：US13869284
申请日：2013-04-24
Applicant: Samsung Display Co., Ltd.
Inventor： Sang-Ho Moon , Jong-Moo Huh , Sung-Ho Kim
CPC classification number: H01L21/02532 , H01L21/02422 , H01L21/02488 , H01L21/02592 , H01L21/02595 , H01L21/02667 , H01L21/02678 , H01L21/02686 , H01L21/266 , H01L21/31111 , H01L21/31144 , H01L27/1255 , H01L27/1274 , H01L27/1285 , H01L27/1288 , H01L27/3244 , H01L27/3265 , H01L28/60 , H01L29/66757 , H01L2227/323
Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.
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