Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US15243986Application Date: 2016-08-23
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Publication No.: US09685337B2Publication Date: 2017-06-20
- Inventor: Ching-Wen Hung , Jia-Rong Wu , Yi-Hui Lee , Ying-Cheng Liu , Chih-Sen Huang , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW104132992A 20151007
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L21/28 ; H01L29/66 ; H01L21/285 ; H01L21/768 ; H01L29/78 ; H01L29/06 ; H01L29/49
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of : providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate.
Public/Granted literature
- US20170103896A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-04-13
Information query
IPC分类:
