Invention Grant
- Patent Title: Semiconductor device comprising transistor including oxide semiconductor
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Application No.: US15175190Application Date: 2016-06-07
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Publication No.: US09685447B2Publication Date: 2017-06-20
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-251261 20091030
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L27/105 ; H01L27/12 ; H01L29/24 ; H01L29/16 ; G11C11/405 ; G11C16/04 ; H01L27/115 ; H01L27/11551 ; H01L27/1156 ; H01L27/118 ; H01L29/786 ; H01L21/822 ; H01L27/06 ; H01L27/108 ; H01L29/78

Abstract:
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
Public/Granted literature
- US20160293606A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-10-06
Information query
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