- 专利标题： Substrate for epitaxial growth, and crystal laminate structure
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申请号： US14851210申请日： 2015-09-11
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公开(公告)号： US09685515B2公开(公告)日： 2017-06-20
- 发明人: Kohei Sasaki
- 申请人： TAMURA CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： TAMURA CORPORATION
- 当前专利权人： TAMURA CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC.
- 优先权： JP2011-196429 20110908
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L31/07 ; H01L29/24 ; C30B29/16 ; H01L21/02 ; C30B23/06 ; C30B29/22 ; C30B29/68 ; H01L29/04 ; C30B13/00 ; C30B15/34
摘要：
A crystal laminate structure includes an epitaxial growth substrate including a β-Ga2O3-based single crystal and a (010) plane or a plane inclined at an angle not more than 37.5° with respect to the (010) plane as a main surface thereof and a high electrical resistance, and an epitaxial crystal formed on the main surface of the epitaxial growth substrate. The epitaxial crystal includes a Ga-containing oxide.