- 专利标题: Semiconductor integrated circuit and high frequency antenna switch
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申请号: US15233709申请日: 2016-08-10
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公开(公告)号: US09685944B1公开(公告)日: 2017-06-20
- 发明人: Toshiki Seshita
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Patterson & Sheridan, LLP
- 优先权: JP2015-247844 20151218
- 主分类号: H03K3/00
- IPC分类号: H03K3/00 ; H03K17/22 ; H03K19/21 ; H03K19/00
摘要:
An integrated circuit includes a drive circuit with a first inverter circuit with a first transistor of a first conductivity type and a second transistor of a second conductivity type. The drains of the first and second transistors are connected. An output circuit is provided having a third transistor of the second conductivity with a gate connected to the drains of the first and second transistors. A capacitor is connected between the gate and a drain of the third transistor and has a capacitance greater than 0.5 pF and less than or equal to 3.0 pF. A gate width of the first transistor when divided by a gate width of the third transistor has a value of less than 1/100. The output circuit is configured to output a transmission signal from the drain of the third transistor.
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