Invention Grant
- Patent Title: Vertical fin field-effect semiconductor device
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Application No.: US15072130Application Date: 2016-03-16
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Publication No.: US09698262B2Publication Date: 2017-07-04
- Inventor: Bartlomiej Pawlak , Geert Eneman
- Applicant: IMEC VZW , GLOBALFOUNDRIES INC.
- Applicant Address: BE Leuven KY Grand Cayman
- Assignee: IMEC VZW,Globalfoundries Inc.
- Current Assignee: IMEC VZW,Globalfoundries Inc.
- Current Assignee Address: BE Leuven KY Grand Cayman
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: EP15159324 20150317
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/80 ; H01L29/94 ; H01L21/00 ; H01L21/338 ; H01L21/337 ; H01L29/78 ; H01L21/765 ; H01L29/06 ; H01L29/10 ; H01L29/423
Abstract:
A vertical FinFET semiconductor device and a method of forming the same are disclosed. In one aspect, the semiconductor device includes a current-blocking structure formed over a semiconductor structure and a semiconductor fin formed on the current-blocking structure. The current blocking structure includes a first layer of a first conductive type, a layer of a second conductive type over the first layer, and a second layer of the first conductive type over the layer of the second conductive type. The semiconductor fin has a doped bottom portion contacting the current-blocking structure, a doped top portion formed vertically opposite to the doped bottom portion and a channel portion vertically interposed between the doped bottom portion and the doped top portion.
Public/Granted literature
- US20160276478A1 VERTICAL FIN FIELD-EFFECT SEMICONDUCTOR DEVICE Public/Granted day:2016-09-22
Information query
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