- 专利标题： FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof
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申请号： US14885115申请日： 2015-10-16
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公开(公告)号： US09711533B2公开(公告)日： 2017-07-18
- 发明人: Kuo-Cheng Ching , Ching-Wei Tsai , Chih-Hao Wang , Ying-Keung Leung
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/118
- IPC分类号： H01L27/118 ; H01L29/78 ; H01L29/66 ; H01L29/08
摘要：
A semiconductor device includes a first FinFET device and a second FinFET device. The first FinFET device includes a first gate, a first source, and a first drain. The first FinFET device has a first source/drain proximity. The second FinFET device includes a second gate, a second source, and a second drain. The second FinFET device has a second source/drain proximity that is smaller than the first source/drain proximity. In some embodiments, \the first FinFET device is an Input/Output (I/O) device, and the second FinFET device is a non-I/O device such as a core device. In some embodiments, the greater source/drain proximity of the first FinFET device is due to an extra spacer of the first FinFET device that does not exist for the second FinFET device.
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