- 专利标题: Two-dimensional condensation for uniaxially strained semiconductor fins
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申请号: US15216649申请日: 2016-07-21
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公开(公告)号: US09711598B2公开(公告)日: 2017-07-18
- 发明人: Jack T. Kavalieros , Nancy Zelick , Been-Yih Jin , Markus Kuhn , Stephen M. Cea
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/165 ; H01L29/161
摘要:
Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
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