Invention Grant
- Patent Title: Oxide semiconductor film and semiconductor device
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Application No.: US15137613Application Date: 2016-04-25
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Publication No.: US09711655B2Publication Date: 2017-07-18
- Inventor: Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2010-270557 20101203
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/04 ; H01L29/10 ; H01L29/24
Abstract:
A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.
Public/Granted literature
- US20160240694A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE Public/Granted day:2016-08-18
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