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    Transistor and display device
    1.
    发明授权
    Transistor and display device 有权

    公开(公告)号：US12009432B2

    公开(公告)日：2024-06-11

    申请号：US17679413

    申请日：2022-02-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hitoshi Kunitake ,  Yasuhiro Jinbo ,  Naoki Okuno ,  Masahiro Takahashi ,  Tomonori Nakayama

    IPC: H01L29/786 ,  G09G3/32

    CPC classification number: H01L29/78603 ,  G09G3/32 ,  H01L29/78681 ,  G09G2300/0426

    Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

    Positive electrode active material particle
    4.
    发明授权
    Positive electrode active material particle 有权

    公开(公告)号：US11444274B2

    公开(公告)日：2022-09-13

    申请号：US16914539

    申请日：2020-06-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masahiro Takahashi ,  Teruaki Ochiai ,  Yohei Momma ,  Ayae Tsuruta

    IPC: H01M4/36 ,  H01M4/505 ,  H01M4/525 ,  H01M4/02

    Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain; and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

    Stack and semiconductor device
    5.
    发明授权
    Stack and semiconductor device 有权

    公开(公告)号：US11387343B2

    公开(公告)日：2022-07-12

    申请号：US16975855

    申请日：2019-02-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tomoki Hiramatsu

    IPC: H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02

    Abstract: A stack with excellent electrical characteristics and reliability is provided. The stack includes an insulator, a conductor, and a first oxide between the insulator and the conductor; the first oxide includes a first c-axis-aligned crystal region; and a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side. Alternatively, the stack includes an insulator, a conductor, a first oxide between the insulator and the conductor, and a second oxide facing the first oxide with the insulator therebetween; the first oxide includes a first c-axis-aligned crystal region; a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side; the second oxide includes a second c-axis-aligned crystal region; and a c-axis of the second crystal region is substantially perpendicular to a plane of the second oxide on the insulator side.

    Light-emitting element
    10.
    发明授权
    Light-emitting element 有权

    公开(公告)号：US10403839B2

    公开(公告)日：2019-09-03

    申请号：US15339016

    申请日：2016-10-31

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Satoko Shitagaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Masahiro Takahashi ,  Kunihiko Suzuki

    IPC: H05B33/14 ,  H01L51/50 ,  H01L51/00 ,  C09K11/02 ,  C09K11/06 ,  H01L51/52

    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

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