Invention Grant
- Patent Title: Memory device and controlling method of the same
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Application No.: US14620305Application Date: 2015-02-12
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Publication No.: US09715344B2Publication Date: 2017-07-25
- Inventor: Sang-Kwon Moon , Seung-Uk Shin , Kyung-Ho Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0029268 20140312
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02

Abstract:
A flash memory system is provided. The flash memory system includes a memory device including a memory cell array including at least one data block and a controller that determines whether to end background garbage collection according to a lifespan index of the at least one data block. The lifespan index may be decreased by the background garbage collection. The controller may end the background garbage collection when the decreased lifespan index is equal to or higher than a reference value.
Public/Granted literature
- US20150261452A1 MEMORY DEVICE AND CONTROLLING METHOD OF THE SAME Public/Granted day:2015-09-17
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