Invention Grant
- Patent Title: Systems with memory segmentation and systems with biasing lines to receive same voltages during accessing
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Application No.: US14570254Application Date: 2014-12-15
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Publication No.: US09721622B2Publication Date: 2017-08-01
- Inventor: Aaron Yip
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C13/00 ; G11C7/18
Abstract:
Memory devices, memory arrays, and methods of operation of memory arrays with segmentation. Segmentation elements can scale with the memory cells, and may be uni-directional or bi-directional diodes. Biasing lines in the array allow biasing of selected and unselected select devices and segmentation elements with any desired bias, and may use biasing devices of the same construction as the segmentation elements.
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