Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14475298Application Date: 2014-09-02
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Publication No.: US09721935B2Publication Date: 2017-08-01
- Inventor: Kazushige Kawasaki , Yoichiro Kurita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-051238 20140314
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L21/768 ; H01L23/31 ; H01L21/56

Abstract:
A semiconductor device includes a first chip, a second chip stacked on the first chip, and a third chip stacked on the second chip. The second chip includes a second semiconductor layer having a second circuit surface facing the first wiring layer and a second rear surface opposite to the second circuit surface, a second wiring layer provided on the second circuit surface and connected to a first wiring layer of the first chip, and a second electrode extending through the second semiconductor layer and connected to the second wiring layer. The third chip includes a third semiconductor layer having a third circuit surface and a third rear surface facing the second chip, a third wiring layer provided on the third circuit surface, and a third electrode extending through the third semiconductor layer, connected to the third wiring layer and connected to the second electrode through bumps.
Public/Granted literature
- US20150262989A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-09-17
Information query
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