Invention Grant
- Patent Title: Radiation-emitting semiconductor chip and method of producing radiation-emitting semiconductor chips
-
Application No.: US15026490Application Date: 2014-08-29
-
Publication No.: US09721940B2Publication Date: 2017-08-01
- Inventor: Andreas Plössl , Heribert Zull
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102013110853 20131001
- International Application: PCT/EP2014/068403 WO 20140829
- International Announcement: WO2015/049079 WO 20150409
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/02 ; H01L25/16 ; H01L33/38 ; H01L33/62 ; H01L33/06 ; H01L33/30 ; H01L33/00 ; H01L33/48

Abstract:
A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.
Public/Granted literature
- US20160218097A1 RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD OF PRODUCING RADIATION-EMITTING SEMICONDUCTOR CHIPS Public/Granted day:2016-07-28
Information query
IPC分类: