公开(公告)号：US10553148B2

公开(公告)日：2020-02-04

申请号：US15775574

申请日：2016-11-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Martin ,  Thomas Schwarz ,  Frank Singer ,  Andreas Plössl

IPC: G09G3/32 ,  G06F3/14 ,  H01L25/075 ,  H01L33/62

Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

公开(公告)号：US20200091372A1

公开(公告)日：2020-03-19

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US20180322824A1

公开(公告)日：2018-11-08

申请号：US15775574

申请日：2016-11-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Martin ,  Thomas Schwarz ,  Frank Singer ,  Andreas Plössl

IPC: G09G3/32 ,  G06F3/14

CPC classification number: G09G3/32 ,  G06F3/1446 ,  G09G2300/026 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2330/02 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/92247

Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

公开(公告)号：US20170271438A1

公开(公告)日：2017-09-21

申请号：US15614917

申请日：2017-06-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ewald Karl Michael Günther ,  Andreas Plössl ,  Heribert Zull ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck ,  Bernd Böhm ,  Korbinian Perzlmaier

IPC: H01L29/06 ,  H01L25/16 ,  H01L29/66 ,  H01L27/02 ,  H01L27/14 ,  H01L27/15 ,  H01L33/00 ,  H01L33/64 ,  H01L33/38 ,  H01L23/60

CPC classification number: H01L29/0607 ,  H01L23/60 ,  H01L25/167 ,  H01L27/0248 ,  H01L27/14 ,  H01L27/15 ,  H01L29/66128 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/641 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

公开(公告)号：US20150048400A1

公开(公告)日：2015-02-19

申请号：US14383177

申请日：2013-02-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Jürgen Moosburger ,  Andreas Plössl ,  Matthias Sabathil

IPC: H01L33/64 ,  H01L33/46 ,  H01L33/00

CPC classification number: H01L33/641 ,  C23C24/04 ,  C25D7/12 ,  H01L33/0079 ,  H01L33/46 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0075 ,  H01L2924/00

Abstract: A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.

Abstract translation: 制造光电子半导体芯片的方法包括在生长衬底上生长光电子半导体层序列，通过将电绝缘材料的颗粒沉积在光电子半导体层序列的一侧上而形成电光绝缘层 气溶胶沉积法，并且在形成电绝缘层之后至少部分去除生长衬底。

公开(公告)号：US11081620B2

公开(公告)日：2021-08-03

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US10991683B2

公开(公告)日：2021-04-27

申请号：US16486559

申请日：2018-03-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin von Malm ,  Andreas Plössl

IPC: H01L25/16 ,  H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/40 ,  H01L33/56 ,  H01L33/62 ,  H01L33/32

Abstract: A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

公开(公告)号：US09721940B2

公开(公告)日：2017-08-01

申请号：US15026490

申请日：2014-08-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Heribert Zull

IPC: H01L21/00 ,  H01L27/02 ,  H01L25/16 ,  H01L33/38 ,  H01L33/62 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/48

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/30 ,  H01L33/382 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.