- 专利标题： Bipolar junction transistors with a buried dielectric region in the active device region
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申请号： US14747668申请日： 2015-06-23
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公开(公告)号： US09722057B2公开(公告)日： 2017-08-01
- 发明人: Renata Camillo-Castillo , Vibhor Jain , Marwan H. Khater
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBAL FOUNDRIES Inc.
- 当前专利权人： GLOBAL FOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Thompson Hine LLP
- 代理商 Anthony Canale
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L21/265 ; H01L21/762 ; H01L21/764 ; H01L29/06 ; H01L29/08 ; H01L29/66
摘要：
Device structure and fabrication methods for a bipolar junction transistor. A trench isolation region is formed that bounds an active device region along a sidewall. A dielectric region is formed that extends laterally from the sidewall of the active device region into the active device region. The dielectric region is located beneath a top surface of the active device region such that a section of the active device region is located between the top surface and the dielectric region.
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