A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. The memory device utilizes a local buried channel dielectric in a NAND string that reduces bulk channel leakage at the edge of the NAND string where the electric field gradient along the direction of the string pillar is at or near a maximum during programming operations. The memory device comprises a channel that is coupled at one end to a bitline and at the other end to a source. A select gate is formed at the end of the channel coupled to the bitline to selectively control conduction between the bitline and the channel. At least one non-volatile memory cell is formed along the length of the channel between the select gate and the second end of the channel. A local dielectric region is formed within the channel at the first end of the channel.