Invention Grant
- Patent Title: Ultra high performance silicon carbide gate drivers
-
Application No.: US14983251Application Date: 2015-12-29
-
Publication No.: US09722595B2Publication Date: 2017-08-01
- Inventor: Fengfeng Tao , Michael Joseph Schutten , Jeffrey Joseph Nasadoski , Maja Harfman-Todorovic , John Stanley Glaser
- Applicant: General Electric Company
- Applicant Address: US NY Niskayuna
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Niskayuna
- Agent John P. Darling
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16 ; H05K3/36 ; H03K17/691

Abstract:
A system includes a SiC semiconductor power device; a power supply board that is configured to provide power to a first gate driver board via a connector; the first gate driver board that is coupled and configured to provide current to the SiC semiconductor power device, wherein the first gate driver board is coupled to the power supply board via the connector, and wherein the first gate driver board is separated from the power supply board; and an interconnect board that is coupled to the first gate driver board, wherein the interconnect board is configured to couple the first gate driver board a second gate driver board.
Public/Granted literature
- US20170187369A1 ULTRA HIGH PERFORMANCE SILICON CARBIDE GATE DRIVERS Public/Granted day:2017-06-29
Information query
IPC分类: