- 专利标题: Manufacture method of TFT array substrate and TFT array substrate sturcture
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申请号: US14430205申请日: 2014-09-11
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公开(公告)号: US09726955B2公开(公告)日: 2017-08-08
- 发明人: Bo Sun , Hongyuan Xu , Hsiangchih Hsiao , Changi Su , Mian Zeng , Xiaoxiao Wang
- 申请人: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- 申请人地址: CN Shenzhen, Guangdong
- 专利权人: Shenzhen China Star Optoelectronics Technology Co., Ltd
- 当前专利权人: Shenzhen China Star Optoelectronics Technology Co., Ltd
- 当前专利权人地址: CN Shenzhen, Guangdong
- 代理商 Andrew C. Cheng
- 优先权: CN201410415951 20140821
- 国际申请: PCT/CN2014/086264 WO 20140911
- 国际公布: WO2016/026183 WO 20160225
- 主分类号: G02F1/1368
- IPC分类号: G02F1/1368 ; H01L21/12 ; G02F1/136 ; H01L21/84 ; H01L27/12 ; G02F1/1335 ; G02F1/1343 ; H01L21/02 ; H01L21/027 ; H01L21/285 ; H01L29/66 ; H01L29/786 ; G02F1/1362 ; G02F1/1333
摘要:
The present invention provides a manufacture method of a TFT array substrate and a TFT array substrate structure, and the TFT array substrate structure comprises a substrate (1), a first metal electrode (2) on the substrate (1), a gate isolation layer (3) positioned on the substrate (1) and completely covering the first metal electrode (2), an island shaped semiconductor layer (4) on the gate isolation layer (3), a second metal electrode (6) on the gate isolation layer (3) and the island shaped semiconductor layer (4), a protecting layer (8) on the second metal electrode (6), a color resist layer (7) on the protecting layer (8), a protecting layer (12) on the color resist layer (7) and a first pixel electrode layer (9) on the protecting layer (12); a via (81) is formed on the protecting layer (8), the color resist layer (7) and the protecting layer (12), and an organic material layer (10) fills the inside of the via (81).
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