发明授权
- 专利标题： Silicon carbide substrate, semiconductor device and methods for manufacturing them
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申请号： US15239255申请日： 2016-08-17
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公开(公告)号： US09728612B2公开(公告)日： 2017-08-08
- 发明人: Keiji Ishibashi
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi, Osaka
- 代理机构： Drinker Biddle & Reath LLP
- 优先权： JP2011-158608 20110720
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L29/36 ; H01L29/66 ; H01L29/868 ; H01L29/04 ; H01L29/16 ; B28D5/04 ; H01L21/04
摘要：
A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.
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