Invention Grant
- Patent Title: Hybrid exclusive multi-level memory architecture with memory management
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Application No.: US13931701Application Date: 2013-06-28
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Publication No.: US09734079B2Publication Date: 2017-08-15
- Inventor: Dannie G. Feekes , Shlomo Raikin , Blaise Fanning , Joydeep Ray , Julius Mandelblat , Ariel Berkovits , Eran Shifer , Zvika Greenfield , Evgeny Bolotin
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/0893 ; G06F12/08 ; G06F12/0866 ; G06F12/06 ; G06F1/32

Abstract:
Hybrid multi-level memory architecture technologies are described. A System on Chip (SOC) includes multiple functional units and a multi-level memory controller (MLMC) coupled to the functional units. The MLMC is coupled to a hybrid multi-level memory architecture including a first-level dynamic random access memory (DRAM) (near memory) that is located on-package of the SOC and a second-level DRAM (far memory) that is located off-package of the SOC. The MLMC presents the first-level DRAM and the second-level DRAM as a contiguous addressable memory space and provides the first-level DRAM to software as additional memory capacity to a memory capacity of the second-level DRAM. The first-level DRAM does not store a copy of contents of the second-level DRAM.
Public/Granted literature
- US20150006805A1 HYBRID MULTI-LEVEL MEMORY ARCHITECTURE Public/Granted day:2015-01-01
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