- 专利标题: Negative ribbon ion beams from pulsed plasmas
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申请号: US14811272申请日: 2015-07-28
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公开(公告)号: US09734991B2公开(公告)日: 2017-08-15
- 发明人: Daniel Distaso , Svetlana B. Radovanov , Joseph P. Dzengeleski
- 申请人: Varian Semiconductor Equipment Associates, Inc.
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 代理机构: Nields, Lemack & Frame, LLC
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J27/02 ; H01J27/16 ; H01J37/08
摘要:
An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.
公开/授权文献
- US20170032937A1 Negative Ribbon Ion Beams from Pulsed Plasmas 公开/授权日:2017-02-02
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