Invention Grant
- Patent Title: Method for forming semiconductor device structure with fine line pitch and fine end-to-end space
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Application No.: US14789337Application Date: 2015-07-01
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Publication No.: US09735028B2Publication Date: 2017-08-15
- Inventor: Hung-Hao Chen , Yu-Shu Chen , Yu-Cheng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L23/48 ; H01L21/027 ; H01L21/3213 ; H01L21/768 ; H01L23/532
Abstract:
A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H2). The method further includes controlling a flow rate of the hydrogen gas (H2) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.
Public/Granted literature
- US20160268143A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH FINE LINE PITCH AND FINE END-TO-END SPACE Public/Granted day:2016-09-15
Information query
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