A method and apparatus for detecting VC defects and determining the exact shorting locations based on charging dynamics induced by scan direction variation are provided. Embodiments include providing a substrate having at least a partially formed device thereon, the partially formed device having at least a word-line, a share contact, and a bit-line; performing a first EBI on the at least partially formed device in a single direction; classifying defects by ADC based on the first EBI inspection; selecting DOI among the classified defects for further review; performing a second EBI on the DOI in a first, second, third, and fourth direction; comparing a result of the first direction against a result of the second direction and/or a result of the third direction against a result of the fourth direction; and determining a shorting location for each DOI based on the one or more comparisons.