公开(公告)号：US10816483B2

公开(公告)日：2020-10-27

申请号：US16233336

申请日：2018-12-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jed H. Rankin ,  Guoxiang Ning ,  Paul W. Ackmann ,  Jung-Yu Hsieh ,  Ming Lei

IPC: G01N21/956 ,  G03F7/20 ,  G06T7/00

Abstract: A reticle inspection system and related method are disclosed. The system includes a concave spherical mirror positioned adjacent a side of the reticle that is configured to reflect inspection light transmitted through the reticle back towards and through the reticle. A sensor is configured to create at least one of: a first inspection image representative of a circuit pattern of the reticle based on transmission of the inspection light through the first side of the reticle and a reflection thereof by the concave spherical mirror through the second side of the reticle, and a second inspection image representative of the circuit pattern of the reticle based on the reflection of the inspection light from the first side of the reticle. A controller is configured to identify a defect in the reticle based on at least one of the first inspection image and the second inspection image.

公开(公告)号：US20140233014A1

公开(公告)日：2014-08-21

申请号：US13769494

申请日：2013-02-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ming Lei

IPC: G01N21/88

CPC classification number: G01N21/9505 ,  G01B11/161 ,  G01N21/8806 ,  G01N21/95692 ,  G01N2201/061 ,  G01N2201/0668 ,  G01N2201/12

Abstract: An approach for IR-based metrology for detecting stress and/or defects around TSVs of semiconductor devices is provided. Specifically, in a typical embodiment, a beam of IR light will be emitted from an IR light source through the material around the TSV. Once the beam of IR light has passed through the material around the TSV, the beam will be analyzed using one or more algorithms to determine information about TSV stress and/or defects such as imbedded cracking, etc. In one embodiment, the beam of IR light may be split into a first portion and a second portion. The first portion will be passed through the material around the TSV while the second portion is routed around the TSV. After the first portion has passed through the material around the TSV, the two portions may then be recombined, and the resulting beam may be analyzed as indicated above.

Abstract translation: 提供了一种用于检测半导体器件TSV周围的应力和/或缺陷的基于红外测量的方法。 具体地，在典型的实施例中，IR光束将从IR光源通过TSV周围的材料发射。 一旦IR光束通过TSV周围的材料，则将使用一种或多种算法来分析光束，以确定关于TSV应力和/或诸如嵌入裂纹等缺陷的信息。在一个实施例中，IR光束 光可以分成第一部分和第二部分。 第一部分将通过TSV周围的材料，而第二部分绕TSV路线。 在第一部分已经穿过TSV周围的材料之后，可以将两个部分重组，并且可以如上所述分析所得到的光束。

公开(公告)号：US20150028482A1

公开(公告)日：2015-01-29

申请号：US13948442

申请日：2013-07-23

Applicant: Globalfoundries Inc.

Inventor： Guoxiang Ning ,  Ming Lei ,  Paul Ackmann

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for reducing through-silicon via (TSV) stress are provided. Specifically, provided is a device comprising a substrate and a TSV formed in the substrate, the TSV having an element patterned therein. The TSV further comprises a set of openings adjacent the element that are subsequently filled with a TSV fill material. The element may be patterned according to any number of shapes (e.g., circle, oval, rectangle, etc.) to optimize the stress distribution for the TSV. The element is patterned and provided within the TSV in order to reduce or compensate for stress forces caused by a change in volume of the conductive fill materials of the openings of the TSV. These approaches apply to both single TSVs and a plurality of TSVs (e.g., arranged as a matrix).

Abstract translation: 提供了减少硅通孔（TSV）应力的方法。 具体地，提供了包括在基板中形成的基板和TSV的器件，TSV具有图案化的元件。 TSV还包括邻近该元件的一组开口，随后填充有TSV填充材料。 元件可以根据任何数量的形状（例如，圆形，椭圆形，矩形等）进行图案化，以优化TSV的应力分布。 元件被图案化并提供在TSV内，以便减少或补偿由TSV的开口的导电填充材料的体积变化引起的应力。 这些方法适用于单个TSV和多个TSV（例如，排列为矩阵）。

公开(公告)号：US10451666B2

公开(公告)日：2019-10-22

申请号：US14989109

申请日：2016-01-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Lei

IPC: G01R31/28 ,  H01L21/66 ,  H01L27/11 ,  G01R31/27 ,  G01R31/307

Abstract: Methods for enabling in-line detection of TS-PC short defects at the TS-CMP processing stage are provided. Embodiments include providing a semiconductor substrate, the substrate having a plurality of partially formed MOSFET devices; performing a first defect inspection on the substrate, the first inspection including ACC; identifying one or more BVC candidates on the substrate based on the first inspection; performing a second defect inspection on the one or more BVC candidates, the second inspection performed without ACC; and detecting one or more BVC defects on the substrate based on the one or more BVC candidates appearing during both the first and second inspections.

公开(公告)号：US09506874B2

公开(公告)日：2016-11-29

申请号：US14691392

申请日：2015-04-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Lei

IPC: G01J3/00 ,  G01N21/95 ,  G01N21/88 ,  G01N21/956 ,  G01B11/16

CPC classification number: G01N21/9505 ,  G01B11/161 ,  G01N21/8806 ,  G01N21/95692 ,  G01N2201/061 ,  G01N2201/0668 ,  G01N2201/12

Abstract: An approach for IR-based metrology for detecting stress and/or defects around TSVs of semiconductor devices is provided. Specifically, in a typical embodiment, a beam of IR light will be emitted from an IR light source through the material around the TSV. Once the beam of IR light has passed through the material around the TSV, the beam will be analyzed using one or more algorithms to determine information about TSV stress and/or defects such as imbedded cracking, etc. In one embodiment, the beam of IR light may be split into a first portion and a second portion. The first portion will be passed through the material around the TSV while the second portion is routed around the TSV. After the first portion has passed through the material around the TSV, the two portions may then be recombined, and the resulting beam may be analyzed as indicated above.

公开(公告)号：US20200209166A1

公开(公告)日：2020-07-02

申请号：US16233336

申请日：2018-12-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jed H. Rankin ,  Guoxiang Ning ,  Paul W. Ackmann ,  Jung-Yu Hsieh ,  Ming Lei

IPC: G01N21/956 ,  G06T7/00 ,  G03F7/20

Abstract: A reticle inspection system and related method are disclosed. The system includes a concave spherical mirror positioned adjacent a side of the reticle that is configured to reflect inspection light transmitted through the reticle back towards and through the reticle. A sensor is configured to create at least one of: a first inspection image representative of a circuit pattern of the reticle based on transmission of the inspection light through the first side of the reticle and a reflection thereof by the concave spherical mirror through the second side of the reticle, and a second inspection image representative of the circuit pattern of the reticle based on the reflection of the inspection light from the first side of the reticle. A controller is configured to identify a defect in the reticle based on at least one of the first inspection image and the second inspection image.

公开(公告)号：US20150226681A1

公开(公告)日：2015-08-13

申请号：US14691392

申请日：2015-04-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Lei

IPC: G01N21/95 ,  G01B11/16 ,  G01N21/88

CPC classification number: G01N21/9505 ,  G01B11/161 ,  G01N21/8806 ,  G01N21/95692 ,  G01N2201/061 ,  G01N2201/0668 ,  G01N2201/12

Abstract: An approach for IR-based metrology for detecting stress and/or defects in around TSVs of semiconductor devices is provided. Specifically, in a typical embodiment, a beam of IR light will be emitted from an IR light source through the material around the TSV. Once the beam of IR light has passed through the material around the TSV, the beam will be analyzed using one or more algorithms to determine information about TSV stress and/or defects such as imbedded cracking, etc. In one embodiment, the beam of IR light may be split into a first portion and a second portion. The first portion will be passed through the material around the TSV while the second portion is routed around the TSV. After the first portion has passed through the material around the TSV, the two portions may then be recombined, and the resulting beam may be analyzed as indicated above.

Abstract translation: 提供了一种用于检测半导体器件周围TSV的应力和/或缺陷的基于红外测量的方法。 具体地，在典型的实施例中，IR光束将从IR光源通过TSV周围的材料发射。 一旦IR光束通过TSV周围的材料，则将使用一种或多种算法来分析光束，以确定关于TSV应力和/或诸如嵌入裂纹等缺陷的信息。在一个实施例中，IR光束 光可以分成第一部分和第二部分。 第一部分将通过TSV周围的材料，而第二部分绕TSV路线。 在第一部分已经穿过TSV周围的材料之后，可以将两个部分重组，并且可以如上所述分析所得到的光束。

公开(公告)号：US09041919B2

公开(公告)日：2015-05-26

申请号：US13769494

申请日：2013-02-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Lei

IPC: G01J3/00 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956

CPC classification number: G01N21/9505 ,  G01B11/161 ,  G01N21/8806 ,  G01N21/95692 ,  G01N2201/061 ,  G01N2201/0668 ,  G01N2201/12

Abstract: An approach for IR-based metrology for detecting stress and/or defects around TSVs of semiconductor devices is provided. Specifically, in a typical embodiment, a beam of IR light will be emitted from an IR light source through the material around the TSV. Once the beam of IR light has passed through the material around the TSV, the beam will be analyzed using one or more algorithms to determine information about TSV stress and/or defects such as imbedded cracking, etc. In one embodiment, the beam of IR light may be split into a first portion and a second portion. The first portion will be passed through the material around the TSV while the second portion is routed around the TSV. After the first portion has passed through the material around the TSV, the two portions may then be recombined, and the resulting beam may be analyzed as indicated above.

Abstract translation: 提供了一种用于检测半导体器件TSV周围的应力和/或缺陷的基于红外测量的方法。 具体地，在典型的实施例中，IR光束将从IR光源通过TSV周围的材料发射。 一旦IR光束通过TSV周围的材料，则将使用一种或多种算法来分析光束，以确定关于TSV应力和/或诸如嵌入裂纹等缺陷的信息。在一个实施例中，IR光束 光可以分成第一部分和第二部分。 第一部分将通过TSV周围的材料，而第二部分绕TSV路线。 在第一部分已经穿过TSV周围的材料之后，可以将两个部分重组，并且可以如上所述分析所得到的光束。

公开(公告)号：US09735064B2

公开(公告)日：2017-08-15

申请号：US14812317

申请日：2015-07-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Lei ,  Byoung-Gi Min

IPC: G01R31/02 ,  H01L21/66

CPC classification number: H01L22/00 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/20

Abstract: A method and apparatus for detecting VC defects and determining the exact shorting locations based on charging dynamics induced by scan direction variation are provided. Embodiments include providing a substrate having at least a partially formed device thereon, the partially formed device having at least a word-line, a share contact, and a bit-line; performing a first EBI on the at least partially formed device in a single direction; classifying defects by ADC based on the first EBI inspection; selecting DOI among the classified defects for further review; performing a second EBI on the DOI in a first, second, third, and fourth direction; comparing a result of the first direction against a result of the second direction and/or a result of the third direction against a result of the fourth direction; and determining a shorting location for each DOI based on the one or more comparisons.

公开(公告)号：US09601392B1

公开(公告)日：2017-03-21

申请号：US14927943

申请日：2015-10-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Lei ,  Byoung-Gi Min ,  Xusheng Wu

IPC: H01L21/66 ,  H01L27/11

CPC classification number: H01L22/14 ,  G11C11/4125 ,  G11C29/50008 ,  G11C2029/5002 ,  H01L22/30 ,  H01L22/34 ,  H01L27/1104

Abstract: A method and device for characterizing a DC parameter of a SRAM device based on TDCD are provided. Embodiments include forming a SRAM test device, the SRAM test device having a top edge and a bottom edge and at least a first and a second S/D contact, a gate contact, and a channel region; inducing an inversion charge in the channel region through the gate contact; scanning the first S/D contact with an ebeam subsequent to inducing the inversion charge; and characterizing at least one DC parameter of the SRAM test device based on a dissipation of the inversion charge between the steps of inducing and scanning