Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges. The solid state imaging device outputs a first signal obtained from the plurality of first pixels in an irradiation period of infrared light, and a second signal obtained from the plurality of first pixels in a non-irradiation period of infrared light, in a first frame scanning period, and outputs a third signal obtained from the plurality of first pixels and a fourth signal obtained from the plurality of second pixels, in a second frame scanning period.