Invention Grant
- Patent Title: Substrate placement in immersion lithography
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Application No.: US14931560Application Date: 2015-11-03
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Publication No.: US09740106B2Publication Date: 2017-08-22
- Inventor: Christiaan Alexander Hoogendam , Gerrit Johannes Nijmeijer , Minne Cuperus , Petrus Anton Willem Cornelia Maria Van Eijck
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03B27/58 ; G03F7/20 ; G03F9/00 ; G01B11/26 ; G01B11/14 ; G01B11/27

Abstract:
A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.
Public/Granted literature
- US20160054665A1 SUBSTRATE PLACEMENT IN IMMERSION LITHOGRAPHY Public/Granted day:2016-02-25
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