Invention Grant
- Patent Title: Method of growing nitride semiconductor layer
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Application No.: US13733632Application Date: 2013-01-03
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Publication No.: US09741560B2Publication Date: 2017-08-22
- Inventor: Sung-soo Park , Moon-sang Lee , Young-soo Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0003085 20120110
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L29/20 ; H01L21/3065
Abstract:
A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.
Public/Granted literature
- US20130175541A1 METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER Public/Granted day:2013-07-11
Information query
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