-
公开(公告)号：US09246048B2
公开(公告)日：2016-01-26
申请号：US14564928
申请日：2014-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Su-hee Chae , Young-soo Park , Bok-ki Min , Jun-youn Kim , Hyun-gi Hong
CPC classification number: H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/382 , H01L33/405 , H01L2933/0016
Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
-
公开(公告)号：US20170250316A1
公开(公告)日：2017-08-31
申请号：US15292332
申请日：2016-10-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-hye YEON , Wan-tae Lim , Young-soo Park , Jung-sub Kim , Jin-sub Lee , Ha-nul Yoo , Hye-seok Noh
IPC: H01L33/48 , H01L33/38 , H01L33/50 , H01L33/40 , H01L33/32 , H01L33/30 , H01L33/06 , H01L33/62 , H01L25/075 , H01L33/60
CPC classification number: H01L25/0753 , H01L33/50 , H01L33/504 , H01L33/60
Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.
-
公开(公告)号：US09379319B2
公开(公告)日：2016-06-28
申请号：US14444083
申请日：2014-07-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
IPC: H01L29/02 , H01L45/00 , H01L29/40 , H01L29/51 , H01L29/78 , G06N3/04 , G06N3/063 , G11C11/54 , G11C11/56 , G11C13/00
CPC classification number: H01L29/788 , G06N3/049 , G06N3/063 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C14/0063 , G11C16/0433 , G11C2213/15 , G11C2213/53 , H01L27/11521 , H01L28/00 , H01L29/408 , H01L29/42324 , H01L29/51 , H01L29/512 , H01L29/517 , H01L29/685 , H01L29/78 , H01L45/085 , H01L45/1206 , H01L45/147
Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.
Abstract translation: 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。
-
公开(公告)号：US08969178B2
公开(公告)日：2015-03-03
申请号：US13743634
申请日：2013-01-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moon-sang Lee , Sung-soo Park , Young-soo Park
IPC: H01L21/02
CPC classification number: H01L21/02263 , H01L21/02002 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02642
Abstract: A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.
Abstract translation: 制造大面积氮化镓（GaN）衬底的方法包括在硅衬底上形成缓冲层，在缓冲层顶表面的边缘上形成绝缘层图案，在缓冲层上生长GaN层，以及 去除绝缘层图案和GaN层和硅衬底的一部分。
-
公开(公告)号：US10153260B2
公开(公告)日：2018-12-11
申请号：US15878720
申请日：2018-01-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-hye Yeon , Wan-tae Lim , Young-soo Park , Jung-sub Kim , Jin-sub Lee , Ha-nul Yoo , Hye-seok Noh
IPC: H01L33/50 , H01L25/075 , H01L33/60
Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.
-
Patent Agency Ranking
公开(公告)号：US20160268418A1
公开(公告)日：2016-09-15
申请号：US15165372
申请日：2016-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
IPC: H01L29/788 , G11C16/04 , H01L27/115 , G11C14/00 , H01L29/423 , H01L29/51
CPC classification number: H01L29/788 , G06N3/049 , G06N3/063 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C14/0063 , G11C16/0433 , G11C2213/15 , G11C2213/53 , H01L27/11521 , H01L28/00 , H01L29/408 , H01L29/42324 , H01L29/51 , H01L29/512 , H01L29/517 , H01L29/685 , H01L29/78 , H01L45/085 , H01L45/1206 , H01L45/147
Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.
-
公开(公告)号：US09190270B2
公开(公告)日：2015-11-17
申请号：US14294823
申请日：2014-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Eun-ha Lee
CPC classification number: H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L33/007 , H01L33/12 , H01L33/325 , H01S5/0014 , H01S5/021 , H01S5/34333
Abstract: Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.
Abstract translation: 提供了一种低缺陷半导体器件及其制造方法。 该方法包括在硅衬底上形成缓冲层，在第一生长条件下在缓冲层上形成界面控制层，并在不同于第一生长条件的第二生长条件下，在界面控制层上形成氮化层。
-
8.发明授权Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same 有权具有图案化发光单元的垂直发光器件及其制造方法公开(公告)号：US08871544B2
公开(公告)日：2014-10-28
申请号：US14067185
申请日：2013-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyung-su Jeong , Young-soo Park , Su-hee Chae , Bok-ki Min , Jun-youn Kim , Hyun-gi Hong , Young-jo Tak , Jae-won Lee
CPC classification number: H01L33/0025 , H01L27/156 , H01L33/32 , H01L33/38 , H01L33/42
Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.
Abstract translation: 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。
-
公开(公告)号：US10900142B2
公开(公告)日：2021-01-26
申请号：US15641746
申请日：2017-07-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sam-mook Kang , Jun-youn Kim , Young-jo Tak , Mi-hyun Kim , Young-soo Park
IPC: C30B25/16 , H01L21/687 , H01J37/32 , C23C16/52 , C30B25/14 , C30B25/12 , C23C16/455 , C23C16/02 , C23C16/458 , C23C16/01 , C23C16/30 , C30B25/18 , C30B29/40 , H01L21/02 , H01L21/78
Abstract: An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.
-
公开(公告)号：US10553752B2
公开(公告)日：2020-02-04
申请号：US15270156
申请日：2016-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam-goo Cha , Young-soo Park , Dong-hyun Cho
Abstract: A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.017 seconds)
