A semiconductor device includes a set of fin structures having a set of fin ends at a respective vertical surface of a fin structure and is separated by a set of trenches from other fin structures. Each of the fin structures has a top surface which is higher than a top surface of a dielectric material in the set of trenches. A set of dielectric blocks is disposed at the set of fin ends, the dielectric blocks having a top surface level with or above the top surfaces of the fin structures which inhibit excessive epitaxial growth at the fin ends.