Invention Grant
- Patent Title: Array substrate fabricating method
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Application No.: US14778257Application Date: 2015-04-16
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Publication No.: US09741751B2Publication Date: 2017-08-22
- Inventor: Ke Wang , Seongyeol Yoo
- Applicant: Boe Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201410643661 20141106
- International Application: PCT/CN2015/076706 WO 20150416
- International Announcement: WO2016/070581 WO 20160512
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1343 ; G02F1/1362 ; H01L29/786 ; G02F1/1368

Abstract:
The present invention provides an array substrate fabricating method. The array substrate fabricating method comprises the steps of: forming a semiconductor material layer and a first photoresist layer on a substrate successively, forming a pattern of an active layer comprising thin film transistors by using the semiconductor material layer and the first photoresist layer through photoetching technology, and reserving the first photoresist layer at least on conductive areas of the active layer when the thin film transistors are turned on; and forming a first material layer on the substrate on which the active layer is formed and the first photoresist layer is reserved on the active layer, and forming a pattern comprising first structures by using the first material layer through the photoetching technology. The method is adapted for fabricating an array substrate using metal oxide thin film transistors.
Public/Granted literature
- US20160284741A1 ARRAY SUBSTRATE FABRICATING METHOD Public/Granted day:2016-09-29
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