Invention Grant
- Patent Title: System and method for a low noise amplifier module
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Application No.: US15144907Application Date: 2016-05-03
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Publication No.: US09742364B2Publication Date: 2017-08-22
- Inventor: Nikolay Ilkov , Paulo Oliveira , Daniel Kehrer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H03F3/181
- IPC: H03F3/181 ; H03F3/19 ; H03F1/02 ; H03F3/191 ; H04B1/10

Abstract:
In accordance with an embodiment, a circuit includes a low noise amplifier transistor disposed on a first integrated circuit, a single pole multi throw (SPMT) switch disposed on a second integrated circuit, and a bypass switch coupled between a control node of the low noise amplifier transistor and an output node of the low noise amplifier transistor. The SPMT switch couples a plurality of module input terminals to a control node of the low noise amplifier transistor, and the bypass switch including a first switch coupled between the control node of the low noise amplifier transistor and an intermediate node, a second switch coupled between the intermediate node and the output node of the low noise amplifier transistor, and a third switch coupled between the intermediate node and a first reference node. The first integrated circuit and the second integrated circuit are disposed on a substrate.
Public/Granted literature
- US20160248388A1 System and Method for a Low Noise Amplifier Module Public/Granted day:2016-08-25
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