Invention Grant
- Patent Title: High power radio frequency amplifier architecture
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Application No.: US15200204Application Date: 2016-07-01
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Publication No.: US09742445B1Publication Date: 2017-08-22
- Inventor: Robert Actis , Robert J. Lender, Jr. , Jared P. Majcher , John R. Muir , Edwin C. Powers
- Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Finch & Maloney PLLC
- Agent Scott J. Asmus
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04 ; H03F3/19 ; H01L25/065 ; H01L23/66 ; H01L23/00 ; H03F3/21 ; H01L23/367 ; H01L23/373 ; H01L23/02

Abstract:
A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and Ka-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.
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