公开(公告)号：US10700649B2

公开(公告)日：2020-06-30

申请号：US16130155

申请日：2018-09-13

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Frank A. Mannarino ,  Robert Actis ,  Robert C. Marion ,  John R. Muir ,  Steven Rajkowski ,  Eldon M. Sutphin

IPC: H03F3/195 ,  H03F1/02 ,  H03F1/30 ,  H03G3/30 ,  H03F3/213

Abstract: A system and method for using an embedded microprocessor in an RF amplifier. The use of an embedded microprocessor avoids manual calibration. The Microprocessor collects initial amplifier performance data based on a set of parameters and calculates the needed corrections. The microprocessor can change levels within the circuit to achieve those operating points. The embedded microprocessor sets voltage levels with internal circuitry and communicates this information externally through a serial communication port, or the like, to allow a user to communicate with and look at the amplifier data and readjust the internal bias levels, as needed. Thus, the internal microprocessor provides for calibration, self-testing, and monitoring of the RF amplifier and also functions as an in situ bias and temperature compensation controller for use in the presence of temperature variation and provides bias sequencing control to protect against improper applied timing of voltage inputs to the amplifier.

公开(公告)号：US09742445B1

公开(公告)日：2017-08-22

申请号：US15200204

申请日：2016-07-01

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Robert J. Lender, Jr. ,  Jared P. Majcher ,  John R. Muir ,  Edwin C. Powers

IPC: H01Q11/12 ,  H04B1/04 ,  H03F3/19 ,  H01L25/065 ,  H01L23/66 ,  H01L23/00 ,  H03F3/21 ,  H01L23/367 ,  H01L23/373 ,  H01L23/02

CPC classification number: H04B1/04 ,  H01L23/02 ,  H01L23/3675 ,  H01L23/3732 ,  H01L23/3736 ,  H01L23/66 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0655 ,  H01L2223/6644 ,  H01L2223/6683 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/32502 ,  H01L2224/83101 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2924/01006 ,  H01L2924/01042 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/1033 ,  H01L2924/1423 ,  H01L2924/1426 ,  H01L2924/15747 ,  H03F3/19 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2203/21106 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/0105

Abstract: A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and Ka-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.

公开(公告)号：US08989683B2

公开(公告)日：2015-03-24

申请号：US13833653

申请日：2013-03-15

Applicant: BAE Systems Information And Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Robert J. Lender, Jr. ,  Steven Rajkowski ,  Bernard J. Schmanski

IPC: H01Q11/12 ,  H04B1/04 ,  H03G3/30 ,  H03F3/24 ,  H03F3/60

CPC classification number: H03G3/3042 ,  H03F3/24 ,  H03F3/602

Abstract: Techniques and architecture are disclosed for providing an ultra-wideband, multi-channel solid-state power amplifier architecture. In some embodiments, the architecture includes a power divider which splits an input signal and delivers that split signal to a plurality of downstream channel chipsets. Each channel chipset is configured to amplify a sub-band of the original full-band input signal and to provide the resultant amplified sub-band for downstream use, such as for transmission by an antenna operatively coupled with that channel. In the aggregate, the amplified sub-bands provide coverage of the same ultra-wideband frequency range of the original input signal, in some cases. In some embodiments, the architecture provides high radio frequency (RF) power with good amplifying efficiency and ultra-wide instantaneous frequency bandwidth performance in a small-form-factor package. In some instances, control circuitry is provided to control which chipset die(s) are enabled/disabled, thus providing control over gain and power levels of the output signal(s).

Abstract translation: 公开了用于提供超宽带多通道固态功率放大器架构的技术和架构。 在一些实施例中，该架构包括功率分配器，其分割输入信号并将该分离信号传送到多个下游信道芯片组。 每个通道芯片组被配置为放大原始全频带输入信号的子带，并且为下游使用提供所得到的放大子带，例如用于与该信道可操作地耦合的天线的传输。 总之，在某些情况下，放大的子带提供了与原始输入信号相同的超宽带频率范围的覆盖。 在一些实施例中，该体系结构提供具有良好的放大效率和超小型瞬时频率带宽性能的高射频（RF）功率。 在一些情况下，提供控制电路以控制哪个芯片组管芯被启用/禁用，从而提供对输出信号的增益和功率电平的控制。

公开(公告)号：US20130341644A1

公开(公告)日：2013-12-26

申请号：US13879696

申请日：2012-07-18

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Pane-chane Chao ,  Bernard J. Schmanski ,  Anthony A. Immorlica ,  Kanin Chu ,  Robert J. Lender, JR. ,  Dong Xu ,  Sue May Jessup

IPC: H01L23/373

CPC classification number: H01L23/373 ,  H01L23/481 ,  H01L23/66 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2224/4847 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1421 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00

Abstract: In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink.

Abstract translation: 总而言之，以通孔形式的垂直金属化转变从高导热性衬底的背面开始并通过其上的任何半导体层到图案化的金属化带，衬底在背面具有图案化的金属化层， 具有保留区，其尺寸设置成为通过衬底耦合到半导体器件的RF能量提供阻抗匹配，同时允许由半导体器件产生的热量流过高导热性衬底，通过该衬底的背面 底物和一个水槽。

公开(公告)号：US09537605B1

公开(公告)日：2017-01-03

申请号：US14806206

申请日：2015-07-22

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Robert J. Lender, Jr. ,  Virginia W. Murray ,  Edwin C. Powers

IPC: H04K3/00 ,  H04B1/04

CPC classification number: H04K3/62 ,  H04B1/04 ,  H04K2203/24

Abstract: An ultra-wideband high-power solid-state transmitter for electronic warfare applications which includes a plurality of wideband Gallium-Nitride (GaN) semiconductor monolithic-microwave integrated circuits (MMICs), a spatial power combiner to sum the aggregate contribution of the MMICs, a wide bandwidth small form factor driver amplifier module to supply the required gain in the transmitter, and a thermal management system.

Abstract translation: 一种用于电子战应用的超宽带大功率固态发射机，其包括多个宽带镓氮化物（GaN）半导体单片微波集成电路（MMIC），空间功率组合器，用于对MMIC的总体贡献进行求和， 宽带小尺寸驱动放大器模块，用于提供发射器所需的增益，以及热管理系统。

公开(公告)号：US20130260703A1

公开(公告)日：2013-10-03

申请号：US13833653

申请日：2013-03-15

Applicant: BAE SYSTEMS Information And Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Robert J. Lender, JR. ,  Steven Rajkowski ,  Bernard J. Schmanski

IPC: H03G3/30

CPC classification number: H03G3/3042 ,  H03F3/24 ,  H03F3/602

Abstract: Techniques and architecture are disclosed for providing an ultra-wideband, multi-channel solid-state power amplifier architecture. In some embodiments, the architecture includes a power divider which splits an input signal and delivers that split signal to a plurality of downstream channel chipsets. Each channel chipset is configured to amplify a sub-band of the original full-band input signal and to provide the resultant amplified sub-band for downstream use, such as for transmission by an antenna operatively coupled with that channel. In the aggregate, the amplified sub-bands provide coverage of the same ultra-wideband frequency range of the original input signal, in some cases. In some embodiments, the architecture provides high radio frequency (RF) power with good amplifying efficiency and ultra-wide instantaneous frequency bandwidth performance in a small-form-factor package. In some instances, control circuitry is provided to control which chipset die(s) are enabled/disabled, thus providing control over gain and power levels of the output signal(s).

Abstract translation: 公开了用于提供超宽带多通道固态功率放大器架构的技术和架构。 在一些实施例中，该架构包括功率分配器，其分割输入信号并将该分离信号传送到多个下游信道芯片组。 每个通道芯片组被配置为放大原始全频带输入信号的子带，并且为下游使用提供所得到的放大子带，例如用于与该信道可操作地耦合的天线的传输。 总之，在某些情况下，放大的子带提供了与原始输入信号相同的超宽带频率范围的覆盖。 在一些实施例中，该体系结构提供具有良好的放大效率和超小型瞬时频率带宽性能的高射频（RF）功率。 在一些情况下，提供控制电路以控制哪个芯片组管芯被启用/禁用，从而提供对输出信号的增益和功率电平的控制。