A method for mitigating shot noise in extreme ultraviolet (EUV) lithography and patterning of photo-sensitized chemically-amplified resist (PS-CAR) is described. The method includes a first EUV patterned exposure to generate a photosensitizer and a second flood exposure at a wavelength different than the wavelength of the first EUV patterned exposure, to generate acid in regions exposed during the first EUV patterned exposure, wherein the photosensitizer acts to amplify acid generation and improve contrast. The resist may be exposed to heat, liquid solvent, solvent atmosphere, or a vacuum to mitigate the effects of EUV shot noise on photosensitizer concentration which may accrue during the first EUV patterned exposure.